Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels
- 1 May 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (3) , 601-609
- https://doi.org/10.1116/1.586807
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: