Actively mode-locked external-cavity semiconductor lasers with transform-limited single-pulse output
- 15 June 1992
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 17 (12) , 868-870
- https://doi.org/10.1364/ol.17.000868
Abstract
We describe the use of split-contact semiconductor laser diodes to suppress multiple-pulsing phenomena in actively mode-locked external-cavity lasers. The laser-diode length is critical for the elimination of multiple-pulse output. With a grating installed in the external cavity, 11.5-ps pulses are generated that have a time–bandwidth product of only 0.30, an important property for use in soliton transmission systems. By using a broadband mirror in place of the grating, nearly transform-limited single pulses of 1.4-ps duration are generated at a 3-GHz repetition rate.Keywords
This publication has 8 references indexed in Scilit:
- Suppression of multiple pulse formation in external-cavity mode-locked semiconductor lasers using intrawaveguide saturable absorbersIEEE Photonics Technology Letters, 1992
- High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidthIEEE Photonics Technology Letters, 1992
- 5.5-mm long InGaAsP monolithic extended-cavity laser with an integrated Bragg-reflector for active mode-lockingIEEE Photonics Technology Letters, 1992
- Comparison of timing jitter in external and monolithic cavity mode-locked semiconductor lasersApplied Physics Letters, 1991
- Fundamental limits of sub-ps pulse generation by active mode locking of semiconductor lasers: the spectral gain width and the facet reflectivitiesIEEE Journal of Quantum Electronics, 1991
- Monolithic hybrid mode-locked 1.3 μm semiconductor lasersApplied Physics Letters, 1990
- Actively mode-locked semiconductor lasersIEEE Journal of Quantum Electronics, 1989
- 40 GHz active mode-locking in a 1.5 µm monolithic extended-cavity laserElectronics Letters, 1989