Self-consistent calculations of the density of 2D electron gas in heterointerface as a function of the doping level in n-AlxGa1−xAs layer
- 31 May 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (6) , 485-488
- https://doi.org/10.1016/0038-1098(85)90652-0
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- Velocity-Modulation Transistor (VMT) –A New Field-Effect Transistor ConceptJapanese Journal of Applied Physics, 1982
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972