Mobility Hump and Inversion Layer Subbands in Si on Sapphire
- 15 September 1976
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 41 (3) , 1073-1074
- https://doi.org/10.1143/jpsj.41.1073
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Magnetoresistance Anisotropies in n-Type (001) Si on SapphireJournal of the Physics Society Japan, 1975
- Elastoresistance of n-type silicon on sapphireJournal of Applied Physics, 1974
- Anisotropy in electrical properties of {001} Si/{011̄2} Al2O3Journal of Applied Physics, 1973
- Determination of Deformation Potential Constants from the Electron Cyclotron Resonance in Germanium and SiliconJournal of the Physics Society Japan, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967