Characterization of Hydrogenated Amorphous Silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques

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Abstract
Rutherford backscattering spectrometry and infrared absorption measurement were applied to determine composition in hydrogenated amorphous silicon fabricated either by glow discharge in SiH4 plus H2 or by reactive sputtering in Ar containing H2 in a tetrode or diode sputtering apparatus. The atomic density of Si, the content and depth distribution of H, and the amount of impurities such as Ar were studied for the films deposited under several conditions of substrate temperature and gas pressure and constitution. Some difference was clarified between glowdischarge and sputter deposited films.

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