Growth of Pb(Zr, Ti)O3 Thin Films by Photoenhanced Chemical Vapor Deposition and Their Properties
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9S)
- https://doi.org/10.1143/jjap.31.3005
Abstract
Pb(Zr, Ti)O3 thin films were grown by photoenhanced chemical vapor deposition (CVD) using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4 and O2. Two types of perovskite Pb(Zr, Ti)O3 films (tetragonal films and rhombohedral films) were successfully obtained at 600-635°C by controlling the carrier flow ratio of the Zr source to Ti source. The Zr/Ti flow ratio also affected the growth rate, composition and electrical properties of films. In this study, it was proven that significant increases in both growth rate and Zr/Ti compositional ratio were caused by photoirradiation. Dielectric and ferroelectric properties, switching characteristics and I-V characteristics of the obtained Pb(Zr, Ti)O3 films were also described in detail.Keywords
This publication has 4 references indexed in Scilit:
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