Large-signal computer simulations of the contact, circuit, and bias dependence of X-band transferred electron oscillators

1 May 1978

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 25 (5) , 511-519
https://doi.org/10.1109/T-ED.1978.19120

Abstract

We present a treatment synthesizing the roles of the contact and the circuit forX-band length transferred electron devices sustaining self-excited oscillations. The contact is modeled with specific cathode electric-field relations. The circuit is modeled with lumped elements. The scope of the simulation is relevant to both high-efficiency InP oscillations and the moderate-efficiency GaAs oscillations.

Keywords

ELECTRIC FIELD
GALLIUM ARSENIDE
ELECTRONS
ELECTRON TRANSFER
SIGNAL ANALYSIS
CATHODES
OSCILLATORS
DIFFERENTIAL EQUATION
RESPONSE BIAS
THRESHOLD VOLTAGE
COMPUTER SIMULATION
SPACE CHARGE
BOUNDARY CONDITION
CURRENT DENSITY
DIFFERENTIAL EQUATIONS
NUMERICAL METHOD
OSCILLATIONS

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