LiInSe2 thin epitaxial films on {111} a-oriented GaAs
- 1 March 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 101 (4) , 339-344
- https://doi.org/10.1016/0040-6090(83)90100-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Single-crystal growth and characterization of LiGaSe2Journal of Applied Physics, 1981
- Structural investigations of CuInSe2 epitaxial layers on {110}- and {100}-oriented GaAs SubstratesJournal of Crystal Growth, 1981
- Single crystal growth and characterization of LiInSe2Journal of Crystal Growth, 1981
- Adamantine ternary epitaxial layersProgress in Crystal Growth and Characterization, 1980
- Single crystal growth of LiInS2Journal of Crystal Growth, 1979
- Determination of lattice parameters at thin epitaxial layers by RHEEDCrystal Research and Technology, 1979
- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- Structural and electrical properties of CuGaSe2 thin films on GaAs substratesCrystal Research and Technology, 1978