Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics

1 October 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (10) , 1377-1380
https://doi.org/10.1109/t-ed.1984.21719

Abstract

Elastic stresses are frequently induced in GaAs substrates during the fabrication of FET's, particulariy in the vicinity of windows in dielectric overlayers. It is shown here that these stresses can produce piezoelectric charge densities of such magnitude to appreciably shift the pinchoff voltage and saturation current of FET's. These shifts are of opposite sign for FET's oriented along [011] and [011] directions on

Keywords

ORIENTATION
FABRICATION
PIEZOELECTRIC
GAAS
DIELECTRIC
VOLTAGE
SHIFT
PINCHOFF
STRESSES
FET'S