Fabrication of ZnSe quantum dots under Volmer–Weber mode by metalorganic chemical vapor deposition
- 28 April 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (17) , 2256-2258
- https://doi.org/10.1063/1.118831
Abstract
The possibility of fabricating quantum dots under Volmer–Weber growth mode is investigated. Layers of ZnSe/ZnS were grown by metalorganic chemical vapor deposition on both Si and GaAs substrates. The images of surface morphology, taken by atomic force microscopy, showed that the layers were grown in three-dimensional islands. Blueshift was observed in the photoluminescence spectra up to room temperature for these samples. This blueshift was shown to originate from the ZnSe islands. The effect of ZnSe growth duration was investigated. It was found that the blueshift increased with shorter ZnSe growth durations, but this near band gap emission disappeared when the ZnSe growth duration was longer than 5 s. Effects of quantum confinement and strain were considered to resolve the origin of the blueshift. Our result suggests that carrier confinement plays a dominant role.Keywords
This publication has 17 references indexed in Scilit:
- Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructuresApplied Physics Letters, 1996
- Structural and photoluminescence properties of growth-induced InAs island columns in GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- Growth and characterization of II–VI blue light-emitting diodes using short period superlatticesApplied Physics Letters, 1996
- Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnSxSe1−x/ZnSe buffer layer/GaAs heterostructuresApplied Physics Letters, 1995
- Low-threshold buried-ridge II-VI laser diodesApplied Physics Letters, 1993
- Room temperature continuous operation of blue-green laser diodesElectronics Letters, 1993
- Improved ohmic contacts for p-type ZnSe and related p-on-n diode structuresApplied Physics Letters, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982