Impact ionization model for dielectric instability and breakdown
- 15 December 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (12) , 685-687
- https://doi.org/10.1063/1.1655361
Abstract
A mechanism describing the incipient stages of intrinsic dielectric breakdown is formulated for the case of a wide‐band‐gap insulator with a low hole mobility. Dielectric instability results from the tunnel injection of electrons from the cathode contact and the subsequent impact ionization and field distortion which lead to dielectric breakdown. The model, evaluated for the parameters of SiO2, predicts an intrinsic breakdown voltage which approaches a lower limit of V=9+φ for very thin films, where φ is the cathode contact barrier in volts. As a result, both the electric field at breakdown and the critical current density increase rapidly as the film thickness is reduced below 200 Å.Keywords
This publication has 15 references indexed in Scilit:
- Calculation of electric field breakdown in quartz as determined by dielectric dispersion analysisJournal of Applied Physics, 1972
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Photoemission Measurements of the Valence Levels of Amorphous SiPhysical Review Letters, 1971
- Thickness Influence in Breakdown Phenomena of Thin Dielectric FilmsPhysica Status Solidi (b), 1964
- Infrared Lattice Bands of QuartzPhysical Review B, 1961
- The electrical conduction of glass at high field strengthsPhysica, 1956
- On the Theory of Electron Multiplication in CrystalsPhysical Review B, 1949
- Breakdown of Ionic Crystals by Electron AvalanchesPhysical Review B, 1949
- Electronic Conduction In Insulating Crystals Under Very High Field StrengthPhysical Review B, 1938
- Theory of electrical breakdown in ionic crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937