Electronic Structure and Optical Properties of (Ga, In)As–(Ga, Al)As Quantum Wells and Superlattices under Internal and External Strain Fields

1 January 1993

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 32 (S1)
https://doi.org/10.7567/jjaps.32s1.93

Abstract

We present a detailed study of the electronic structure and optical properties of (Ga,In)As-(Ga,AI)As strained-layer quantum wells and superlattices grown along either the (001) and (111) directions.

Keywords

OPTICAL PROPERTIES
EXTERNAL
GROWN
STRUCTURE AND OPTICAL
ELECTRONIC STRUCTURE