Magnesium incorporation in GaN grown by molecular-beam epitaxy
- 8 January 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (3) , 285-287
- https://doi.org/10.1063/1.1339255
Abstract
A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy. Incorporation was studied for both (0001), or Ga-polarity and or N-polarity orientations. Up to a factor of 30 times more Mg was incorporated in Ga-polarity layers under certain conditions, as determined by secondary ion mass spectrometry. Measurements indicate surface accumulation of Mg occurs during growth, with stable accumulations of close to a monolayer of Mg on the Ga-polarity surface. The presence of atomic hydrogen during growth significantly increased incorporation of Mg without also incorporating potentially compensating hydrogen.
Keywords
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