PEM Effect in Silicon
- 1 November 1964
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 3 (11) , 720-723
- https://doi.org/10.1143/jjap.3.720
Abstract
The PEM effect in silicon was observed by using two p-type specimens doped with boron, which have the charge carrier concentration of 1.96×1013and 3.66×1013cm-3respectively, at 300°K. From the variation with illumination and with temperature, it was found that the energy gap of the recombination center was about 0.35 eV. The spectral dependence of the PEM effect together with that of the photoconductive effect indicated that the diffusion process controlled by the concentration gradient was effective in PEM effect.Keywords
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