Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 859-862
- https://doi.org/10.1109/iedm.1996.554115
Abstract
Early production results are reviewed for IBM's integrated SiGe HBT technology. With a sample size of over 200 wafers, statistical control of key HBT parameters (F/sub T/, F/sub max/, R/sub bb/, R/sub bi/, /spl beta/) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirement for the high performance wireless communications marketplace.Keywords
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