Electrical properties of CdTe metal–semiconductor field effect transistors

• 1 July 1988
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology A
• Vol. 6  (4) , 2722-2724
• https://doi.org/10.1116/1.575493

Abstract

Keywords

• HALL EFFECT
• OHMIC CONTACT
• CRYSTAL GROWTH
• MOLECULAR BEAM EPITAXY
• SCHOTTKY DIODE
• SIGNAL PROCESSING
• CADMIUM TELLURIDE
• SCHOTTKY BARRIER
• FIELD EFFECT TRANSISTOR
• BREAKDOWN VOLTAGE