Intersubband resonance in quasi one-dimensional inversion channels
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (24) , 2586-2589
- https://doi.org/10.1103/physrevlett.58.2586
Abstract
With infrared spectroscopy we study the electronic excitations in laterally periodic GaAs-AlGaAs heterojunctions and metal-oxide-semiconductor devices on InSb in which narrow inversion channels are created and controlled by field effect. Quantization into quasione-dimensional subbands is demonstrated by direct observation of resonance transitions between those subbands.Keywords
This publication has 13 references indexed in Scilit:
- Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs HeterojunctionPhysical Review Letters, 1986
- Electron states in narrow gate-induced channels in SiApplied Physics Letters, 1986
- Observation of resonant tunneling in silicon inversion layersPhysical Review Letters, 1986
- Universal conductance fluctuations in silicon inversion-layer nanostructuresPhysical Review Letters, 1986
- Ground-state variational wave function for the quasi-one-dimensional semiconductor quantum wirePhysical Review B, 1986
- Universal Conductance Fluctuations in Narrow Si Accumulation LayersPhysical Review Letters, 1986
- Quasi One-Dimensional Conduction in Multiple, Parallel Inversion LinesPhysical Review Letters, 1986
- Screening and elementary excitations in narrow-channel semiconductor microstructuresPhysical Review B, 1985
- Nonlocality in the Two-Dimensional Plasmon DispersionPhysical Review Letters, 1985
- Minigaps in the Plasmon Dispersion of a Two-Dimensional Electron Gas with Spatially Modulated Charge DensityPhysical Review Letters, 1984