Dielectric breakdown in high-ε films for ulsi DRAMs: III. Leakage current precursors and electrodes
- 1 June 1995
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 9 (1-3) , 1-12
- https://doi.org/10.1080/10584589508012900
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramicsIntegrated Ferroelectrics, 1994
- Dielectric breakdown in high-ε films for ULSI DRAMsIntegrated Ferroelectrics, 1993
- Quantitative measurement of space-charge effects in lead zirconate-titanate memoriesJournal of Applied Physics, 1991
- Grain-size effects in ferroelectric switchingPhysical Review B, 1990
- Charge Injection Properties of Thermally-Prepared Iridium Oxide FilmsMRS Proceedings, 1985
- Corrosion of Implant MaterialsAnnual Review of Materials Science, 1976
- The impedance of solid electrolyte cells over the frequency range 10−3 to 108 HzJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1975
- Chapter 11 Photoelectronic AnalysisPublished by Elsevier ,1967
- Elektrochemische Messung der Sauerstoffdiffusion in Metallen bei höheren TemperaturenZeitschrift für Physikalische Chemie, 1966
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947