Buried oxide layers formed by low dose SIMOX processes
- 1 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4) , 411-414
- https://doi.org/10.1016/0167-9317(95)00086-n
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layerIEEE Transactions on Electron Devices, 1993