Cooperative Segregation of Boron at Si(111)
- 10 February 1994
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 25 (5) , 353-356
- https://doi.org/10.1209/0295-5075/25/5/007
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The meandering of steps and the terrace width distribution on clean Si(111): An in-situ experiment using reflection electron microscopySurface Science, 1992
- Influence of surface reconstruction on the orientation of homoepitaxial silicon filmsPhysical Review Letters, 1990
- Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffractionPhysical Review B, 1990
- Adsorption of boron on Si(111): Its effect on surface electronic states and reconstructionPhysical Review Letters, 1989
- Surface doping and stabilization of Si(111) with boronPhysical Review Letters, 1989
- Structure determination of the Si(111):B(√3×√3)R30° surface: Subsurface substitutional dopingPhysical Review Letters, 1989
- Structure of boron enriched Si(111) surfaces investigated by Auger, LEED and scanning tunneling microscopySurface Science, 1989
- Chemistry of solid–solid interfaces — A review of its characterization, theory, and relevance to materials scienceJournal of Vacuum Science and Technology, 1980
- The theory of grain boundary segregation in terms of surface adsorption analoguesMetallurgical Transactions A, 1977