11 GHz and 12 GHz multiwatt internal matching for power GaAs f.e.t.s
- 24 May 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (11) , 326-328
- https://doi.org/10.1049/el:19790232
Abstract
Multiwatt internal-matching techniques for multichip power GaAs f.e.t.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3.4 dB associated gain, and the 12 GHz device 3.6 W power output with 3 dB associated gain.Keywords
This publication has 1 reference indexed in Scilit:
- Internally matched microwave broadband linear power FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977