Effects of Irradiation on the Thermal Conductivity of Synthetic Sapphire

Abstract
The thermal conductivity between 2° and 100°K has been measured on synthetic sapphire single crystals and on sintered alumina, before and after reactor and γ-ray irradiations. Reactor irradiation appears to introduce two types of thermal resistivity-producing defects, one of which is dominant at low temperatures. The only effect of γ irradiation is an extra thermal resistivity at low temperatures which saturates for quite small doses. This saturation value seems to depend on the initial perfection of the crystal and is increased by reactor produced damage. At present, detailed information about the defects cannot be derived from thermal conductivity measurements alone.

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