SiGe bipolar ICs for 20 Gb/s optical transmitter

17 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 167-170
https://doi.org/10.1109/bipol.1994.587886

Abstract

SiGe bipolar ICs, a selector, a multiplier and a D-type flip-flop, have been developed for a 20 Gb/s optical transmitter by using a self-aligned SiGe base bipolar transistor with bonded SOI technology. In the selector IC and the multiplier IC, an internal high speed clock buffer circuit accomplishes stable operation under a single clock input condition.

Keywords

SILICON GERMANIUM
GERMANIUM SILICON ALLOYS
OPTICAL TRANSMITTERS
CLOCKS
BIPOLAR INTEGRATED CIRCUITS
BIPOLAR TRANSISTORS
BONDING
LABORATORIES
NATIONAL ELECTRIC CODE
HIGH SPEED INTEGRATED CIRCUITS

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A novel selective SiGe epitaxial growth technology for self-aligned HBTs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
Si bipolar chip set for 10-Gb/s optical receiver
IEEE Journal of Solid-State Circuits, 1992
Graded-SiGe-base, poly-emitter heterojunction bipolar transistors
IEEE Electron Device Letters, 1989