Control of Schottky barrier height by thin high-doped layer

1 January 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 63 (10) , 1523-1524
https://doi.org/10.1109/PROC.1975.9986

Abstract

Possible ways of controlling Schottky barrier height for a given material are discussed. The values of doping density and thickness of the high-doped layer in metal-n⁺(thin)-n structure for the required barrier height are given.

Keywords

SCHOTTKY BARRIERS
SCHOTTKY DIODES
SEMICONDUCTOR MATERIALS
COMPUTATIONAL MODELING
SEMICONDUCTOR DIODES
MAGNETIC PROPERTIES
INJECTION-LOCKED OSCILLATORS
MICROWAVE OSCILLATORS
FREQUENCY MODULATION
PHASE MODULATION

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