Recessed gate GaN field effect transistor
- 30 November 1997
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (11) , 1819-1820
- https://doi.org/10.1016/s0038-1101(97)00140-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- 75 Å GaN channel modulation doped field effect transistorsApplied Physics Letters, 1996
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistorsApplied Physics Letters, 1996
- Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995