Vibrational Properties of the 〈001〉 Split Interstitial in Silicon
- 1 September 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 89 (1) , 177-186
- https://doi.org/10.1002/pssb.2220890122
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- EPR of aSi interstitial complex in irradiated siliconPhysical Review B, 1976
- Vibrational properties of amorphous Si and GePhysical Review B, 1975
- Carbon Interstitial in the Diamond LatticePhysical Review B, 1973
- Isolated Interstitials in SiliconPhysical Review B, 1971
- Irradiation damage in carbon-doped silicon irradiated at low temperatures by 2 MeV electronsRadiation Effects, 1971
- A Theory of Migration Energies of an Interstitial in Germanium and SiliconJournal of the Physics Society Japan, 1966
- Covalent Bonding in DiamondPhysical Review B, 1965
- New Method for Treating Lattice Point Defects in Covalent CrystalsPhysical Review B, 1965
- Energy Levels in Irradiated GermaniumPhysical Review B, 1959
- Localized Electronic States in Bombarded SemiconductorsZeitschrift für Physikalische Chemie, 1951