Low-temperature photoluminescence study of doped CdTe films grown by photoassisted molecular-beam epitaxy

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Abstract
N-type and p-type (100) CdTe films have been grown on (100) CdTe substrates by photoassisted molecular-beam epitaxy, using indium and antimony as n-type and p-type dopants, respectively. The characterization of these as-grown, in situ doped films using low-temperature (1.6–4.5 K) photoluminescence and excitation photoluminescence is reported. The introduction of the dopant atoms using this new growth technique produces immediate changes in the photoluminescence spectra. The effects on photoluminescence spectra of carrier concentration and dopant incorporation are studied. Radiative recombination peaks related to the introduced impurity levels and the associated bound excitons are observed.

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