Optimization of the magnetic field of perpendicular ferromagnetic thin films for device applications

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Abstract
We studied the geometrical factors controlling the magnitude of the demagnetizing field and the fringing fields of ferromagnetic thin films with perpendicular, out-of-plane magnetization. The magnetic field emerging from the patterned ferromagnetic thin film can interact with carriers in an underlying semiconductor structure and generate a Hall voltage. Different geometries for use in practical device applications have been analyzed, using a simplified model as a design tool. The optimum geometry of the ferromagnetic thin film that will give maximum magnetic-field strength in the underlying semiconductor consists of a grating-type structure with periodicity of a few 100 nm to 1 μm. These geometries are suited for realization by holographic lithography.