Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy
- 21 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 749-751
- https://doi.org/10.1063/1.101795
Abstract
We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.Keywords
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