Cosmic Ray Simulation Experiments for the Study of Single Event Upsets and Latch-Up in CMOS Memories
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4464-4469
- https://doi.org/10.1109/tns.1983.4333155
Abstract
Heavy ion induced single event upsets and latch-up in 4K CMOS RAMs and PROMs have been demonstrated using both the Harwell Variable Energy Cyclotron and a laboratory Californium-252 source. The latter provides a novel and convenient alternative which complements heavy ion accelerator techniques. A number of memories have been examined by both techniques, enabling appropriate cross sections to be measured.Keywords
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