Prediction of First Phase Formation at Au-METAL Interfaces Using the Effective Heat of Formation Model
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Use of the effective heat of formation rule for predicting phase formation sequence in AlNi systemsMaterials Letters, 1990
- Phase sequence of silicide formation at metal-silicon interfacesVacuum, 1990
- Thin-film reactions of Au with Ti, Zr, V, and NbJournal of Materials Research, 1987
- Reinvestigation of first phase nucleation in planar metal-Si reaction couplesApplied Physics Letters, 1983
- Prediction of Silicide First Phase and Phase Sequence from Heats of FormationMRS Proceedings, 1983
- First nucleation rule for solid-state nucleation in metal-metal thin-film systemsApplied Physics Letters, 1982
- A study of evaporated gold-tin films using transmission electron microscopyThin Solid Films, 1980
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976
- Interdiffusion and compound formation in Ta–Au thin-film couplesJournal of Applied Physics, 1974
- Diffusion in evaporated films of gold—leadPhilosophical Magazine, 1963