A Definitive Heat of Vaporization of Silicon through Benchmark ab Initio Calculations on SiF4
- 19 May 1999
- journal article
- letter
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry A
- Vol. 103 (23) , 4427-4431
- https://doi.org/10.1021/jp9904466
Abstract
No abstract availableKeywords
All Related Versions
This publication has 38 references indexed in Scilit:
- Covalent and Ionic Molecules: Why Are BeF2 and AlF3 High Melting Point Solids whereas BF3 and SiF4 Are Gases?Journal of Chemical Education, 1998
- Relativistic effects in silicon chemistry: Are the experimental heats of formation of the silicon atom and SiH4 compatible?The Journal of Chemical Physics, 1998
- Revised Heat of Formation for Gaseous Boron: Basis Set Limit ab Initio Binding Energies of BF3 and BFThe Journal of Physical Chemistry A, 1998
- Anharmonic Force Fields and Accurate Thermochemistry of H2SiO, cis-HSiOH, and trans-HSiOHThe Journal of Physical Chemistry A, 1998
- Accurate Heats of Formation for SiFn and SiFn+, for n = 1−4The Journal of Physical Chemistry A, 1998
- Assessment of Gaussian-2 and density functional theories for the computation of enthalpies of formationThe Journal of Chemical Physics, 1997
- Electron affinities of the first-row atoms revisited. Systematic basis sets and wave functionsThe Journal of Chemical Physics, 1992
- The standard molar enthalpy of formation of SiF4(g) at 298.15 K by fluorine bomb calorimetryThe Journal of Chemical Thermodynamics, 1986
- A full coupled-cluster singles and doubles model: The inclusion of disconnected triplesThe Journal of Chemical Physics, 1982
- Phase relations and thermodynamic properties of transition metal borides. I. The molybdenum-boron system and elemental boron.The Journal of Physical Chemistry, 1977