New photoresists for deep ultraviolet (<300 nm) exposure

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Abstract
The increasing density of devices in large scale integrated circuits has created a need for lithographic techniques that have higher resolution (≈1 μm) than can be achieved with conventional (≈400 nm) optical technology. By operating in the deep uv (200–300 nm) region of the spectrum, one can reduce diffraction effects and increase resolution. Because of the high optical density of conventional photoresists in this wavelength range, new materials are needed. This paper presents an overview of new positive resists that we have developed. These include methacrylate polymers that undergo photochemical chain scission and two-component (photosensitive solution inhibitor – alkali soluble matrix resin) systems.

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