Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
- 1 January 2001
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 353-356, 537-542
- https://doi.org/10.4028/www.scientific.net/msf.353-356.537
Abstract
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