Intelligent CMOS sensors
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
CMOS including micromechanics using polysilicon structures as functional layers is a promising technology for production of Intelligent CMOS Sensors. Its cost and performance advantages allow to address volume markets like monolithic integrated sensors for automotive application. Using modern silicon processes and their potential for large scale integration, new functions like on-chip calibration and diagnosis are possible. Furthermore, it offers direct digital output signals which is ideal for data processing in microcontrollers. In this technology, the non electric functional blocks (e.g. membranes for pressure sensors) can be miniaturized in a way so that they do not impose a chip real-estate penalty. This immediately reduces the production cost immensely. We will demonstrate the superiority of CMOS as technology for integrated sensors by two examples: An integrated pressure sensor and an integrated fingertip sensor system.Keywords
This publication has 3 references indexed in Scilit:
- Implantable low power integrated pressure sensor system for minimal invasive telemetric patient monitoringPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Projection displays and MEMS: timely convergence for a bright futurePublished by SPIE-Intl Soc Optical Eng ,1995
- A new approach for the fabrication of micromechanical structuresSensors and Actuators, 1989