High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
High temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.Keywords
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