Photoacoustic microscopy to detect subsurface features of integrated circuits

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Abstract
Photoacoustic microscopy has been carried out on p-channel metal-oxide semiconductor integrated circuits using laser excitation and piezoelectric detection. The laser heating beam is modulated in the frequency range 25 Hz–300 kHz and is focused with a spot size of about 2 μm. The ultimate resolution of subsurface structure is better than 5 μm. By selecting a suitable operational frequency and phase angle of the photoacoustic signal, we can obtain a photoacoustic image displaying the subsurface features even in the presence of surface features with strong optical contrast.

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