Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 101-107
- https://doi.org/10.1016/0022-0248(83)90255-5
Abstract
No abstract availableKeywords
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