Dc characteristics and stability behaviour of high-speed Si/SiGe HBTs undoped SiGe spacer between base and collector

18 June 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (13) , 1187-1188
https://doi.org/10.1049/el:19920750

Abstract

The quality of MBE-grown Si/SiGe heterojunction bipolar transistors (HBTs) was improved by inserting a well-defined undoped SiGe layer between the neutral base and the collector. The DC characteristics and the long-term stability of these non-selfaligned devices proved to be excellent, and the transit frequency reached 33 GHz (V_CB = 1V). Those features are essential preconditions for future application in highspeed ICs.

Keywords

TRANSIT FREQUENCY
33 GHZ
HETEROJUNCTION BIPOLAR TRANSISTORS
STABILITY
DC CHARACTERISTICS
UNDOPED SIGE SPACER
NONSELFALIGNED DEVICES
HIGH SPEED HBT
SI-SIGE
MBE

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