Enhanced Schottky barrier heights on n-type Ga 0.47 In 0.53 As by Be implantation
- 2 July 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (14) , 722-723
- https://doi.org/10.1049/el:19870513
Abstract
Ion implantation of Be with extremely low energies of 2–5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0–6 eV, leading to well behaved diode characteristics.Keywords
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