Room-temperature operation of GaAs Bragg-mirror lasers
- 15 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (10) , 684-686
- https://doi.org/10.1063/1.88902
Abstract
Room‐temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid‐phase epitaxy. For gratings with a period of 3700 Å, the diodes lased at 8770 Å, which corresponds to the high‐absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm2 have been realized.Keywords
This publication has 7 references indexed in Scilit:
- GaAs distributed Bragg reflector lasersOptics Communications, 1976
- GaAs-Ga1-xAlxAs double-heterostructure injection lasers with distributed Bragg reflectorsApplied Physics Letters, 1976
- GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinementApplied Physics Letters, 1975
- Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedbackApplied Physics Letters, 1975
- GaAs-AlxGa1-xAs injection lasers with distributed Bragg reflectorsApplied Physics Letters, 1975
- GaAs GaAlAs double-heterostructure injection lasers with distributed feedbackIEEE Journal of Quantum Electronics, 1975
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973