INTERFERENCE OF THE FERMI EDGE SINGULARITY WITH AN EXCITONIC RESONANCE IN DOPED SEMICONDUCTORS

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Abstract
Low-temperature emission spectra are calculated for an n-doped semiconductor in which the Fermi level is almost degenerate with an exciton of a higher conduction band. It is shown that in such a sample the virtual transitions of electrons from the Fermi surface into the excitonic state can lead to a strong enhancement of the optical oscillator strength. In particular, due to this effect, the Fermi edge singularity, which is usually only seen in absorption, can become visible also in the emission spectrum. This explains the optical spectra recently obtained in experiments on modulation-doped heterostructures.

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