Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2and Si3N4
- 1 October 1978
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 17 (10) , 1881-1882
- https://doi.org/10.1143/jjap.17.1881
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: