Germanium quantum dots: Optical properties and synthesis
- 15 July 1994
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 101 (2) , 1607-1615
- https://doi.org/10.1063/1.467781
Abstract
Three different size distributions of Ge quantum dots (≳200, 110, and 60 Å) have been synthesized via the ultrasonic mediated reduction of mixtures of chlorogermanes and organochlorogermanes (or organochlorosilanes) by a colloidal sodium/potassium alloy in heptane, followed by annealing in a sealed pressure vessel at 270 °C. The quantum dots are characterized by transmission electron microscopy, x‐ray powder diffraction, x‐ray photoemission, infrared spectroscopy, and Raman spectroscopy. Colloidal suspensions of these quantum dots were prepared and their extinction spectra are measured with ultraviolet/visible (UV/Vis) and near infrared (IR) spectroscopy, in the regime from 0.6 to 5 eV. The optical spectra are correlated with a Mie theory extinction calculation utilizing bulk optical constants. This leads to an assignment of three optical features to the E(1), E(0’), and E(2) direct band gap transitions. The E(0’) transitions exhibit a strong size dependence. The near IR spectra of the largest dots is dominated by E(0) direct gap absorptions. For the smallest dots the near IR spectrum is dominated by the Γ25→L indirect transitions.Keywords
This publication has 26 references indexed in Scilit:
- Electron energy loss spectroscopy of single silicon nanocrystals: The conduction bandPhysical Review Letters, 1993
- A Liquid-Solution-Phase Synthesis of Crystalline SiliconScience, 1992
- Arrested solid-solid phase transition in 4-nm-diameter cadmium sulfide nanocrystalsThe Journal of Physical Chemistry, 1992
- Photochemical preparation of crystalline silicon nanoclustersChemistry of Materials, 1991
- Electron correlation effects in ligand field parameters and other properties of copper(II) fluorideThe Journal of Physical Chemistry, 1986
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Effect of Carrier Concentration on the Raman Frequencies of Si and GePhysical Review B, 1972
- Infrared spectra of some methyl derivatives of germanium and tinSpectrochimica Acta, 1960
- Infrared spectra-structure correlations for organosilicon compoundsSpectrochimica Acta, 1960
- Organosilicon Polymers. III. Infrared Spectra of the MethylpolysiloxanesJournal of the American Chemical Society, 1947