Refractive Index of SiO2 Films Grown on Silicon
- 1 June 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (6) , 2011-2013
- https://doi.org/10.1063/1.1714393
Abstract
By more precise variable angle monochromatic fringe observation (VAMFO), it has been found possible to improve the precision of thickness determinations of transparent thin films (800 Å to several microns) on reflective substrates to better than 0.1%, and to extend the determination of the refractive index to films as thin as 900 Å. The measured refractive indices (at 5459 Å) of silicon dioxide films grown in steam and/or dry oxygen (atmosphere pressure) at 980° to 1200°C varied from 1.4610 to 1.4624 for 3500‐ to 6800‐Å films. These compare with the refractive indices (at 5461 Å) of 1.4614 for a thick (2.148 μ) steam‐grown film (at 980°C) and 1.4619 for a thick (2.135 μ) oxygen‐grown film (at 1200°C). The technique has also been used to measure the refractive indices of thin films (>900 Å) other than thermal SiO2.This publication has 4 references indexed in Scilit:
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- Nondestructive Determination of Thickness and Refractive Index of Transparent FilmsIBM Journal of Research and Development, 1964
- Index of refraction of fused-quartz glass for ultraviolet, visible, and infrared wavelengthsJournal of Research of the National Bureau of Standards, 1954
- Films Built by Depositing Successive Monomolecular Layers on a Solid SurfaceJournal of the American Chemical Society, 1935