Microstrain and macrostrain profiles in ZnSe epitaxial layers
- 22 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (4) , 343-345
- https://doi.org/10.1063/1.102803
Abstract
We present a microprobe Raman scattering study of the strain in a ZnSe heterostructure with GaAs, Ge, and Si. Measurements taken at adjacent sites of different distances from the interface prove Raman scattering to be a very powerful tool for detecting the strain and distinguishing between local high strains and macroscopic low strains.Keywords
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