MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE

15 June 1970

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 16 (12) , 526-529
https://doi.org/10.1063/1.1653092

Abstract

We have measured the Coates‐Kikuchi pattern degradation of (111) GaAs in the 5‐ to 30‐keV incident electron energy range as a function of 60‐keV cadmium ion dose (10¹² to 10¹⁵ Cd⁺/cm²) at room temperature. Pattern degradation is greater for a given dose at 5‐keV than it is at 30‐keV incident electron energy. Agreement is found between the pattern degradation and measurements of lattice disorder as determined by backscattering of 1‐MeV helium ions. Annealing of the ion‐bombarded samples at temperatures up to 450°C restores the Coates‐Kikuchi pattern quality as the lattice damage is reduced.

Keywords

This publication has 4 references indexed in Scilit:

PSEUDO-KIKUCHI PATTERN DEGRADATION BY A THIN AMORPHOUS SILICON FILM
Applied Physics Letters, 1969
ELECTRON BEAM CHANNELING IN SINGLE-CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY
Applied Physics Letters, 1969
Kikuchi-like reflection patterns obtained with the scanning electron microscope
Philosophical Magazine, 1967
ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
Canadian Journal of Physics, 1967