Measurement of the effect of injected carriers on the p - n refractive-index step in single heterostructure diode lasers
- 31 October 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (22) , 453-455
- https://doi.org/10.1049/el:19740360
Abstract
Far-field emission patterns of GaAs/GaxAl1-x As single heterostructure lasers have been measured over a range of temperature and threshold currents. The pattern width decreases as the threshold increases, which can be interpreted as a reduction of the p-n refractive-index step, owing to the effect of the injected carriers. A quantitative estimate of this effect has been obtained.Keywords
This publication has 2 references indexed in Scilit:
- Role of optical guiding in critical-temperature behaviour, delays and q switching in single hetero-structure GaAs/(GaAl)as lasersElectronics Letters, 1974
- Heterostructure injection lasersPublished by Springer Nature ,1974