Quantum Monte Carlo Simulation of High-Field Electron Transport: An Application to Silicon Dioxide

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Abstract
A new approach to the Monte Carlo simulation of electron transport is presented. The Monte Carlo technique is regarded as a stochastic evaluation of the Green's function expressed as a Feynman path integral. By a proper weighting of the randomly generated trajectories, conventional Monte Carlo simulations can be used to obtain the correct quantum solution. This technique is applied to silicon dioxide by employment of the scattering rates obtained from the Dyson equation, thus extending the validity of the solution beyond the quasiclassical and perturbation approximations.