A theoretical investigation on the generation current in silicon p-n junctions under reverse bias
- 30 September 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (9) , 1003-1011
- https://doi.org/10.1016/0038-1101(72)90143-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Zener and avalanche breakdown in silicon alloyed p-n junctions—ISolid-State Electronics, 1968
- Electrical Properties of Carrier Generation-Recombination Centers in Silicon p-n JunctionsJournal of Applied Physics, 1965
- Heat Treatment Centers and Bulk Currents in Silicon p-n JunctionsJournal of Applied Physics, 1959
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949